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Thermal Conductivity Measurements of AlN thin films by 3ω-method (CAT#: STEM-PPA-0041-WXH)
Introduction
Aluminum nitride (AlN) is a technologically relevant material that can be deposited at low temperatures in the form of thin-films while preserving most of its physical properties.
Principle
The process involves a metal heater applied to the sample that is heated periodically. The temperature oscillations thus produced are then measured. The thermal conductivity and thermal diffusivity of the sample can be determined from their frequency dependence.
Applications
Determining the thermal conductivities of bulk material (i.e. solid or liquid) and thin layers
Procedure
1. Sample preparation and mounting
2. Experimental condition setting
3. Experiment start: Turn on the 3ω signal generator and lock-in amplifier, and control the temperature controller to make the sample temperature reach the set value. When the sample reaches a stable state, data acquisition and processing begin.
4. Data processing
2. Experimental condition setting
3. Experiment start: Turn on the 3ω signal generator and lock-in amplifier, and control the temperature controller to make the sample temperature reach the set value. When the sample reaches a stable state, data acquisition and processing begin.
4. Data processing
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