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Dynamic Secondary Ion Mass Spectrometry (D-SIMS) Technology

Dynamic secondary ion mass spectrometry (D-SIMS) technology is a very sensitive surface analysis technology that uses primary ions to excite a sample surface and produce extremely small amounts of secondary ions. Then, the type of element is determined according to the mass of the secondary ion. D-SIMS can provide elemental structure information on surfaces, films, interfaces, and even 3D samples. The technology has the characteristics of small analysis area, shallow analysis depth and high detection limit. D-SIMS is commonly used for surface analysis of metals, glass, ceramics, films and other materials.

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Spectroscopy Technology

Secondary Ion Mass Spectrometry (SIMS) Technology

Dynamic Secondary Ion Mass Spectrometry (D-SIMS) Technology

CAT#: STEM-ST-1689-CJ

Service Name: Analysis of Materials Multi-layer Structures by Secondary Ion Mass Spectrometry (SIMS)

CAT#: STEM-ST-1692-CJ

Service Name: Analysis Molecular Depth Profiling of Buried Lipid Bilayers by Secondary Ion Mass Spectrometry (SIMS)

CAT#: STEM-ST-1695-CJ

Service Name: Quantitative Evaluation of Molecular Diffusion in Organic Planar Heterojunctions by Secondary Ion Mass Spectrometry (SIMS)

CAT#: STEM-ST-1696-CJ

Service Name: Analysis of Ex Situ Annealing of Epitaxial GaAs Grown on Si Substrates by Secondary Ion Mass Spectrometry (SIMS)

CAT#: STEM-ST-1697-CJ

Service Name: Analysis of Copper Migration at the Copper/Polyimide Interface by Secondary Ion Mass Spectrometry (SIMS)

CAT#: STEM-ST-1701-CJ

Service Name: Depth Profiling Analysis of Metallic Nanolayers on Polymer Films by Secondary Ion Mass Spectrometry (SIMS)

CAT#: STEM-ST-1703-CJ

Service Name: Analysis of Impurities and Nitrogen Isotopes in Gallium Nitride Thin Films by Secondary Ion Mass Spectrometry (SIMS)

CAT#: STEM-ST-1705-CJ

Service Name: Analysis of Yttrium-Stabilized Zirconium Thin Films by Secondary Ion Mass Spectrometry (SIMS)

CAT#: STEM-ST-1706-CJ

Service Name: Depth Profile Analysis of Thin Film Multilayered Structures by Secondary Ion Mass Spectrometry (SIMS)

CAT#: STEM-ST-1709-CJ

Service Name: Analysis of Impurity diffusion of Al in Ni Single Crystals by Secondary Ion Mass Spectrometry (SIMS)

CAT#: STEM-ST-1716-CJ

Service Name: Characterization of Highly Enriched Uranium Particles by Secondary Ion Mass Spectrometry (SIMS)

CAT#: STEM-ST-1718-CJ

Service Name: Identification of Trapping Sites in High-Strength Steels by Secondary Ion Mass Spectrometry (SIMS)

CAT#: STEM-ST-1727-CJ

Service Name: Measurement of the Impurity Diffusion of In in Ni Single Crystals by Secondary Ion Mass Spectrometry (SIMS)

CAT#: STEM-ST-1733-CJ

Service Name: Analysis of Ultrathin Impurity Layers in Semiconductors by Secondary Ion Mass Spectrometry (SIMS)

CAT#: STEM-ST-1752-CJ

Service Name: Analysis Impurity Concentration Profiles in Solids by Secondary Ion Mass Spectrometry (SIMS)

CAT#: STEM-ST-1762-CJ

Service Name: Quantitative Analysis and Depth Profiling of Rare Gases in Solids by Secondary Ion Mass Spectrometry (SIMS)

CAT#: STEM-ST-1763-CJ

Service Name: Analysis Depth Profiling of Sodium in SiO2 Films by Secondary Ion Mass Spectrometry (SIMS)

CAT#: STEM-ST-1812-CJ

Service Name: Identification of the Elements in a Material by Dynamic Secondary Ion Mass Spectrometry (D-SIMS)

CAT#: STEM-ST-1813-CJ

Service Name: Identification of Isotopes Present in a Material by Dynamic Secondary Ion Mass Spectrometry (D-SIMS)

CAT#: STEM-ST-1814-CJ

Service Name: Qualitative Detection of Small Foreign Objects on Product Surfaces by Dynamic Secondary Ion Mass Spectrometry (D-SIMS)

CAT#: STEM-ST-1815-CJ

Service Name: Detection of Thickness and Composition of Multilayer/Monolayer Films by Dynamic Secondary Ion Mass Spectrometry (D-SIMS)