Thin Film Thermoelectric Parameter Measurement System

The system uses a dynamic method to measure the Seebeck coefficient, which avoids the systematic error of the static measurement in the temperature difference measurement, and the measurement is more accurate. The resistivity was measured using the four-wire method.

Test range: Seebeck coefficient: S ≥ 8 µV/K; Resistivity: 0.1 µΩ•m ~ 10⁶ µΩ•m

Relative error accuracy: Seebeck coefficient ≤ ±5%; resistivity ≤ ±5%

Temperature control method / temperature range: 81 K ~ 700 K

Sample Requirements

The surface of the sample to be tested must be flat, and the film uniformity should be good to ensure good contact with the copper sheet.
The thickness of the film material should be as low as 50 nm, and its uniformity has higher requirements. It is better for the film thickness to reach the micron level, length × width: (10~18) × (4~14) mm².
The substrate of the thin film material needs to select a material with a high resistivity or an insulating material, such as glass, Si and other materials.