Electronic structure of In2O3 by X-Ray Emission Spectroscopy (XES) (CAT#: STEM-ST-0301-WXH)

Name: Electronic structure of In2O3 by X-Ray Emission Spectroscopy (XES)
SKU: STEM-ST-0301-WXH
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Introduction

Indium(III) oxide (In2O3) is a chemical compound, an amphoteric oxide of indium. Indium oxide is used in some types of batteries, thin film infrared reflectors transparent for visible light (hot mirrors), some optical coatings, and some antistatic coatings. In combination with tin dioxide, indium oxide forms indium tin oxide (also called tin doped indium oxide or ITO), a material used for transparent conductive coatings. In semiconductors, indium oxide can be used as an n-type semiconductor used as a resistive element in integrated circuits.

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Principle

XES is an element-specific method primarily used to analyze the partially occupied electronic structure of materials. The technique is one of the photon-in-photon-out spectroscopies in which an incident X-ray photon is used to excite a core electron, which leads to the transition of the electron from the ground state to the excited state, and then the excited state of the electron decays with the emission of an X-ray photon in order to fill the core hole.