Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) Technology

Time-of-flight secondary ion mass spectrometry (TOF-SIMS) technology excites the surface of a sample with primary ions to generate extremely small amounts of secondary ions. The mass of the secondary ion is determined according to the different time it takes the secondary ion to travel to the detector for different masses. This technology has excellent detection sensitivity and depth discrimination rate, and is often used in the depth analysis of dopants and impurities, the composition and impurity determination of thin films, and the overall analysis of silicon materials.