Elemental Analysis by Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) (CAT#: STEM-EA-0215-ZJF)

Introduction

With excellent detection limits, time-of-flight SIMS (TOF-SIMS) provides a full elemental and molecular analysis. Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) is a surface analytical technique that focuses a pulsed beam of primary ions onto a sample surface, producing secondary ions in a sputtering process. These secondary ions provide information about the molecular, inorganic, and elemental species present on the surface. Among surface analytical techniques, TOF-SIMS is the most surface-sensitive, with a depth of analysis of only approximately one nanometer. Detection limits for most elements are in the range of parts-per-thousand to parts-per-million using this technique.<br />The TOF-SIMS technique offers the following advantages of analysis:<br />• Surface sensitive, top few monolayers<br />• Detection limits in the ppm range<br />• Survey analysis<br />• Survey depth profiles<br />• Elemental and molecular information<br />• Can analyze insulators and conductors<br />• Sub-µm spatial resolution possible in imaging mode<br />• Major element composition possible, in some applications<br />TOF-SIMS technical specifications:<br />• Signal Detected: Elemental and molecular ions<br />• Elements Detected: Full periodic table coverage, plus molecular species<br />• Detection Limits: Fraction of a monolayer, 107 – 1010 at/cm2 (metal on semiconductor), down to 1 ppm bulk concentration in depth profiles<br />• Depth Resolution: 1-3 monolayers (Static mode), down to 1 nm (depth profiling)<br />• Information Depth: Below 1 nm (static mode), up to 10 μm (depth profiling)<br />• Imaging/Mapping: Yes<br />• Lateral Resolution/Probe Size: Down to 0.2 µm<br />If you have any requirements or questions. Don't hesitate to contact us.